IRLHS6342TRPBF

Specifications

Input Capacitance Ciss Max Vds

1019pF @ 25V

Reach Svhc

No SVHC

Transistor Element Material

SILICON

Continuous Drain Current Id

8.7A

Nominal Vgs

1.1 V

Terminal Sayısı

6

Uzunluk

2.1mm

Turn Off Delay Time

19 ns

Rds On Max Id Vgs

15.5m Ω @ 8.5A, 4.5V

Fet Type

N-Channel

Drain To Source Breakdown Voltage

30V

Fall Time Typ

13 ns

Genişlik

2.1mm

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

12V

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

8.7A Ta 19A Tc

Gate Charge Qg Max Vgs

11nC @ 4.5V

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Matte Tin (Sn)

JESD-609 Kodu

e3

Radyasyon Dayanımı

No

Turn On Delay Time

4.9 ns

Yayın Yılı

2011

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Power Dissipation Max

2.1W Ta

Montaj

Surface Mount

Vgsth Max Id

1.1V @ 10μA

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Pin Sayısı

6

Yükseklik

950μm

RoHS Durumu

ROHS3 Compliant