IRLHS2242TRPBF

Specifications

Current Continuous Drain Id25

7.2A Ta 15A Tc

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

12nC @ 10V

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e3

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

20V

Terminal Kaplaması

Matte Tin (Sn)

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Continuous Drain Current Id

7.2A

Input Capacitance Ciss Max Vds

877pF @ 10V

Terminal Sayısı

6

Rds On Max Id Vgs

31m Ω @ 8.5A, 4.5V

Turn Off Delay Time

54 ns

Nominal Vgs

-800 mV

Drain To Source Breakdown Voltage

-20V

Fet Type

P-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Application

SWITCHING

Threshold Voltage

-800mV

Gate To Source Voltage Vgs

12V

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~150°C TJ

Fall Time Typ

66 ns

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Pin Sayısı

6

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

6-PowerVDFN

Rise Time

54ns

Kurşunsuz

Lead Free

Vgs Max

±12V

Montaj Tipi

Surface Mount

Power Dissipation

9.6W

Direnç

31MOhm

Turn On Delay Time

7.9 ns

Seri

HEXFET®