IRLB8721PBF

Specifications

Radyasyon Dayanımı

No

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

13nC @ 4.5V

Element Configuration

Single

Current Continuous Drain Id25

62A Tc

Genişlik

4.826mm

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Fall Time Typ

17 ns

Fet Type

N-Channel

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

1077pF @ 15V

Power Dissipation

65W

Rise Time

93ns

Case Connection

DRAIN

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

98 mJ

Jedec95 Code

TO-220AB

Dual Supply Voltage

30V

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.02mm

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Vgsth Max Id

2.35V @ 25μA

Pulsed Drain Currentmax Idm

250A

Yayın Yılı

2005

Direnç

8.7mOhm

Transistor Application

SWITCHING

Threshold Voltage

1.8V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

30V

Uzunluk

10.668mm

Terminal Sayısı

3

Turn Off Delay Time

9 ns

Rds On Max Id Vgs

8.7m Ω @ 31A, 10V

Nominal Vgs

1.8 V

Transistor Element Material

SILICON

Continuous Drain Current Id

62A