IRLB4030PBF

Specifications

Radyasyon Dayanımı

No

Current Continuous Drain Id25

180A Tc

Gate Charge Qg Max Vgs

130nC @ 4.5V

Element Configuration

Single

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

100V

Fet Type

N-Channel

Fall Time Typ

170 ns

Genişlik

4.69mm

Transistor Application

SWITCHING

Threshold Voltage

2.5V

Gate To Source Voltage Vgs

16V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

11360pF @ 50V

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Continuous Drain Current Id

180A

Nominal Vgs

2.5 V

Uzunluk

10.5156mm

Terminal Sayısı

3

Rds On Max Id Vgs

4.3m Ω @ 110A, 10V

Turn Off Delay Time

110 ns

Montaj Tipi

Through Hole

Vgs Max

±16V

Jedec95 Code

TO-220AB

Rise Time

330ns

Kılıf / Paket

TO-220-3

Kurşunsuz

Lead Free

Power Dissipation

370W

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

Pin Sayısı

3

Dual Supply Voltage

100V

Yükseklik

15.24mm

RoHS Durumu

ROHS3 Compliant

Terminal

Through Hole

Parça Durumu

Active