Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nominal Vgs
- 1.9 V
- Turn Off Delay Time
- 33 ns
- Rds On Max Id Vgs
- 1.95m Ω @ 60A, 10V
- Uzunluk
- 10.668mm
- Terminal Sayısı
- 3
- Continuous Drain Current Id
- 260A
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Threshold Voltage
- 1.9V
- Transistor Application
- SWITCHING
- Drain To Source Breakdown Voltage
- 30V
- Drain Currentmax Abs Id
- 120A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- HEXFET®
- Turn On Delay Time
- 36 ns
- Recovery Time
- 36 ns
- Parça Durumu
- Active
- Terminal
- Through Hole
- Power Dissipation Max
- 230W Tc
- Montaj
- Through Hole
- Contact Plating
- Tin
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Input Capacitance Ciss Max Vds
- 8420pF @ 15V
- Reach Svhc
- No SVHC
- Fall Time Typ
- 60 ns
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Genişlik
- 4.826mm
- Fet Type
- N-Channel
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 86nC @ 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 260A Tc
- Radyasyon Dayanımı
- No
- Yayın Yılı
- 2009
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