IRLB3034PBF

Specifications

Current Continuous Drain Id25

195A Tc

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Element Configuration

Single

Gate Charge Qg Max Vgs

162nC @ 4.5V

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

10315pF @ 25V

Max Junction Temperature Tj

175°C

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Genişlik

4.699mm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Fall Time Typ

355 ns

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Yükseklik

19.8mm

RoHS Durumu

ROHS3 Compliant

Rise Time

827ns

Jedec95 Code

TO-220AB

Avalanche Energy Rating Eas

255 mJ

Montaj Tipi

Through Hole

Power Dissipation

375W

Direnç

1.7MOhm

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Yayın Yılı

2009

Qualification Status

Not Qualified

Vgsth Max Id

2.5V @ 250μA

Number Of Channels

1

Continuous Drain Current Id

195A

Transistor Element Material

SILICON

Rds On Max Id Vgs

1.7m Ω @ 195A, 10V

Turn Off Delay Time

97 ns

Uzunluk

10.5156mm

Terminal Sayısı

3

Drain To Source Breakdown Voltage

40V

ECCN Kodu

EAR99

Threshold Voltage

2.5V

Transistor Application

SWITCHING