IRL8113SPBF

Specifications

Drain To Source Voltage Vdss

30V

JESD-609 Kodu

e3

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Pozisyonu

SINGLE

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.006Ohm

Ambalaj

Tube

Drain Currentmax Abs Id

42A

Gate Charge Qg Max Vgs

35nC @ 4.5V

Current Continuous Drain Id25

105A Tc

Drive Voltage Max Rds On Min Rds On

4.5V 10V

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Ds Breakdown Voltagemin

30V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

260

Terminal Formu

GULL WING

Fet Type

N-Channel

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

compliant

Rds On Max Id Vgs

6m Ω @ 21A, 10V

Terminal Sayısı

2

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

2840pF @ 15V

Case Connection

DRAIN

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating Eas

220 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V

RoHS Durumu

RoHS Compliant

Number Of Elements

1

Qualification Status

Not Qualified

Vgsth Max Id

2.25V @ 250μA

Pulsed Drain Currentmax Idm

420A

Power Dissipation Max

110W Tc

Jesd30 Code

R-PSSO-G2

Parça Durumu

Obsolete

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)