IRL6342PBF

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2003

Seri

HEXFET®

Turn On Delay Time

6 ns

Recovery Time

20 ns

Vgsth Max Id

1.1V @ 10μA

Pulsed Drain Currentmax Idm

79A

Parça Durumu

Discontinued

Power Dissipation Max

2.5W Ta

Montaj

Surface Mount

Yükseklik

1.75mm

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

8

Additional Feature

HIGH RELIABILITY

Number Of Elements

1

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

Vgs Max

±12V

Rise Time

12ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Nominal Vgs

1.1 V

Turn Off Delay Time

33 ns

Rds On Max Id Vgs

14.6m Ω @ 9.9A, 4.5V

Max Junction Temperature Tj

150°C

Terminal Sayısı

8

Uzunluk

5mm

Input Capacitance Ciss Max Vds

1025pF @ 25V

Continuous Drain Current Id

9.9A

Reach Svhc

No SVHC

Transistor Element Material

SILICON

Fall Time Typ

14 ns

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~150°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Gate To Source Voltage Vgs

12V

Threshold Voltage

1.1V

Transistor Application

SWITCHING

Genişlik

4mm

Drain To Source Breakdown Voltage

30V