IRL60HS118

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yayın Yılı

2013

Turn On Delay Time

8.4 ns

Vgsth Max Id

2.3V @ 10μA

Pulsed Drain Currentmax Idm

56A

Manufacturer Package Identifier

PG-TSDSON-6

Parça Durumu

Active

Power Dissipation Max

11.5W Tc

Jesd30 Code

S-PDSO-N6

Yükseklik

1mm

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

18 Weeks

Number Of Elements

1

Power Dissipation

2.5W

Avalanche Energy Rating Eas

22 mJ

Montaj Tipi

Surface Mount

Vgs Max

±20V

Case Connection

DRAIN

Kılıf / Paket

6-VDFN Exposed Pad

Turn Off Delay Time

9 ns

Rds On Max Id Vgs

17m Ω @ 11A, 10V

Max Junction Temperature Tj

175°C

Terminal Sayısı

6

Input Capacitance Ciss Max Vds

660pF @ 25V

Continuous Drain Current Id

18.5A

Transistor Element Material

SILICON

Terminal Formu

NO LEAD

Threshold Voltage

1.7V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Transistor Application

SWITCHING

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Configuration

SINGLE WITH BUILT-IN DIODE

Fet Type

N-Channel

Drain To Source Breakdown Voltage

60V

Kurşunsuz Kodu

yes