IRL60B216

Specifications

Fet Type

N-Channel

Transistor Application

SWITCHING

Ds Breakdown Voltagemin

60V

Threshold Voltage

2.4V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Genişlik

4.83mm

Continuous Drain Current Id

195A

Transistor Element Material

SILICON

Reach Svhc

Unknown

Input Capacitance Ciss Max Vds

15570pF @ 25V

Rds On Max Id Vgs

1.9m Ω @ 100A, 10V

Turn Off Delay Time

190 ns

Uzunluk

10.67mm

Terminal Sayısı

3

Drain To Source Voltage Vdss

60V

Current Continuous Drain Id25

195A Tc

Operating Mode

ENHANCEMENT MODE

Drainsource On Resistancemax

0.0019Ohm

Ambalaj

Tube

Element Configuration

Single

Gate Charge Qg Max Vgs

258nC @ 4.5V

Montaj

Through Hole

Power Dissipation Max

375W Tc

Parça Durumu

Active

Pulsed Drain Currentmax Idm

780A

Vgsth Max Id

2.4V @ 250μA

Turn On Delay Time

70 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Seri

HEXFET®, StrongIRFET™

Yayın Yılı

2013

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Avalanche Energy Rating Eas

1045 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole