IRL530NSTRLPBF

Specifications

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Radyasyon Dayanımı

No

Voltage Rated Dc

100V

Current Continuous Drain Id25

17A Tc

Element Configuration

Single

Gate Charge Qg Max Vgs

34nC @ 5V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Fet Type

N-Channel

Fall Time Typ

26 ns

Drive Voltage Max Rds On Min Rds On

4V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Genişlik

9.65mm

Tepe Reflow Sıcaklığı (°C)

260

Input Capacitance Ciss Max Vds

800pF @ 25V

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Rise Time

53ns

Power Dissipation

3.8W

Fabrika Tedarik Süresi

12 Weeks

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.826mm

Dual Supply Voltage

100V

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

60A

Direnç

120mOhm

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2004

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

100V

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Threshold Voltage

2V

ECCN Kodu

EAR99

Continuous Drain Current Id

17A

Transistor Element Material

SILICON