IRL530NPBF

Specifications

Seri

HEXFET®

Nem Hassasiyeti (MSL)

1 (Unlimited)

Recovery Time

210 ns

Turn On Delay Time

7.2 ns

Akım Değeri

17A

Montaj

Through Hole

Power Dissipation Max

79W Tc

Parça Durumu

Active

Pin Sayısı

3

Additional Feature

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY

Kılıf / Paket

TO-220-3

Kurşunsuz

Contains Lead, Lead Free

Vgs Max

±16V

Uzunluk

10.5156mm

Terminal Sayısı

3

Turn Off Delay Time

30 ns

Rds On Max Id Vgs

100m Ω @ 9A, 10V

Nominal Vgs

2 V

Transistor Element Material

SILICON

Continuous Drain Current Id

17A

ECCN Kodu

EAR99

Threshold Voltage

2V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

100V

JESD-609 Kodu

e3

Lead Pitch

2.54mm

Yayın Yılı

1998

Tepe Reflow Süresi (maks. sn)

30

Direnç

100mOhm

Vgsth Max Id

2V @ 250μA

Pulsed Drain Currentmax Idm

60A

Dual Supply Voltage

100V

Yükseklik

8.77mm

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Power Dissipation

79W

Rise Time

53ns

Case Connection

DRAIN

Montaj Tipi

Through Hole