IRL3713PBF

Specifications

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

110nC @ 4.5V

Element Configuration

Single

Current Continuous Drain Id25

260A Tc

Voltage Rated Dc

30V

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

5890pF @ 15V

Genişlik

4.82mm

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Fall Time Typ

57 ns

Fet Type

N-Channel

Dual Supply Voltage

30V

Yükseklik

9.017mm

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

Power Dissipation

200W

Rise Time

160ns

Case Connection

DRAIN

Montaj Tipi

Through Hole

Jedec95 Code

TO-220AB

Yayın Yılı

2003

Direnç

3mOhm

Vgsth Max Id

2.5V @ 250μA

Drain Currentmax Abs Id

75A

Terminal Sayısı

3

Uzunluk

10.6426mm

Turn Off Delay Time

40 ns

Rds On Max Id Vgs

3m Ω @ 38A, 10V

Nominal Vgs

2.5 V

Transistor Element Material

SILICON

Continuous Drain Current Id

260A

ECCN Kodu

EAR99

Threshold Voltage

2.5V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

30V