Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tedarikçi Cihaz Paketi
- TO-220AB
- Radyasyon Dayanımı
- No
- Drain To Source Voltage Vdss
- 20V
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 110nC @ 4.5V
- Rds On Max
- 7 mΩ
- Ambalaj
- Tube
- Drain To Source Resistance
- 8mOhm
- Voltage Rated Dc
- 20V
- Current Continuous Drain Id25
- 110A Tc
- Fall Time Typ
- 130 ns
- Gate To Source Voltage Vgs
- 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Drive Voltage Max Rds On Min Rds On
- 4.5V 7V
- Drain To Source Breakdown Voltage
- 20V
- Fet Type
- N-Channel
- Turn Off Delay Time
- 96 ns
- Rds On Max Id Vgs
- 7mOhm @ 64A, 7V
- Input Capacitance Ciss Max Vds
- 4700pF @ 15V
- Maks. Çalışma Sıcaklığı
- 150°C
- Continuous Drain Current Id
- 110A
- Input Capacitance
- 4.7nF
- Power Dissipation
- 140W
- Vgs Max
- ±10V
- Montaj Tipi
- Through Hole
- Kurşunsuz
- Lead Free
- Kılıf / Paket
- TO-220-3
- Rise Time
- 140ns
- RoHS Durumu
- RoHS Compliant
- Pin Sayısı
- 3
- Min. Çalışma Sıcaklığı
- -55°C
- Number Of Elements
- 1
- Vgsth Max Id
- 700mV @ 250μA
- Parça Durumu
- Obsolete
- Akım Değeri
- 110A
- Montaj
- Through Hole
- Power Dissipation Max
- 140W Tc
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Seri
- HEXFET®
- Yayın Yılı
- 2003
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