IRL1404ZPBF

Specifications

Drain Currentmax Abs Id

200A

Continuous Drain Current Id

75A

Transistor Element Material

SILICON

Rds On Max Id Vgs

3.1m Ω @ 75A, 10V

Turn Off Delay Time

30 ns

Terminal Sayısı

3

Uzunluk

10.6426mm

Nominal Vgs

2.7 V

Drain To Source Breakdown Voltage

40V

Threshold Voltage

2.7V

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

Pin Sayısı

3

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Vgs Max

±16V

Recovery Time

39 ns

Turn On Delay Time

19 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

Akım Değeri

75A

Montaj

Through Hole

Power Dissipation Max

230W Tc

Parça Durumu

Active

Current Continuous Drain Id25

75A Tc

Voltage Rated Dc

40V

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Element Configuration

Single

Gate Charge Qg Max Vgs

110nC @ 5V

Radyasyon Dayanımı

No

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

5080pF @ 25V

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

16V

Genişlik

4.82mm

Fall Time Typ

49 ns