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Specifications
- JESD-609 Kodu
- e3
- Drain To Source Breakdown Voltage
- 40V
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Threshold Voltage
- 3V
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 160A
- Nominal Vgs
- 3 V
- Terminal Sayısı
- 2
- Uzunluk
- 10.668mm
- Rds On Max Id Vgs
- 4m Ω @ 95A, 10V
- Turn Off Delay Time
- 38 ns
- Vgs Max
- ±20V
- Kılıf / Paket
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Kurşunsuz
- Contains Lead, Lead Free
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY
- Pin Sayısı
- 3
- Parça Durumu
- Active
- Akım Değeri
- 160A
- Montaj
- Surface Mount, Through Hole
- Power Dissipation Max
- 3.8W Ta 200W Tc
- Turn On Delay Time
- 18 ns
- Seri
- HEXFET®
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Radyasyon Dayanımı
- No
- Voltage Rated Dc
- 40V
- Current Continuous Drain Id25
- 160A Tc
- Gate Charge Qg Max Vgs
- 140nC @ 5V
- Element Configuration
- Single
- Ambalaj
- Tape & Reel (TR)
- Operating Mode
- ENHANCEMENT MODE
- Fet Type
- N-Channel
- Fall Time Typ
- 130 ns
- Genişlik
- 4.826mm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drive Voltage Max Rds On Min Rds On
- 4.3V 10V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Gate To Source Voltage Vgs
- 20V
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