IRL1404PBF

Specifications

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drive Voltage Max Rds On Min Rds On

4.3V 10V

Genişlik

4.69mm

Fall Time Typ

37 ns

Fet Type

N-Channel

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

6590pF @ 25V

Radyasyon Dayanımı

No

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tube

Element Configuration

Single

Gate Charge Qg Max Vgs

140nC @ 5V

Current Continuous Drain Id25

160A Tc

Voltage Rated Dc

40V

Pulsed Drain Currentmax Idm

640A

Vgsth Max Id

3V @ 250μA

Yayın Yılı

2004

Direnç

4MOhm

Power Dissipation

200W

Case Connection

DRAIN

Rise Time

270ns

Avalanche Energy Rating Eas

620 mJ

Jedec95 Code

TO-220AB

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Yükseklik

15.24mm

Number Of Elements

1

Fabrika Tedarik Süresi

14 Weeks

ECCN Kodu

EAR99

Threshold Voltage

3V

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

40V

Turn Off Delay Time

38 ns

Rds On Max Id Vgs

4m Ω @ 95A, 10V

Terminal Sayısı

3

Uzunluk

10.5156mm

Continuous Drain Current Id

160A

Transistor Element Material

SILICON

Power Dissipation Max

200W Tc