IRL1004STRLPBF

Specifications

Vgs Max

±16V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Pin Sayısı

3

Parça Durumu

Obsolete

Akım Değeri

110A

Montaj

Surface Mount

Power Dissipation Max

3.8W Ta 200W Tc

Turn On Delay Time

16 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

HEXFET®

JESD-609 Kodu

e3

Drainsource On Resistancemax

0.0065Ohm

Drain To Source Breakdown Voltage

40V

Terminal Formu

GULL WING

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Continuous Drain Current Id

130A

Transistor Element Material

SILICON

Rds On Max Id Vgs

6.5m Ω @ 78A, 10V

Turn Off Delay Time

25 ns

Terminal Sayısı

2

Uzunluk

10.668mm

Avalanche Energy Rating Eas

700 mJ

Montaj Tipi

Surface Mount

Case Connection

DRAIN

Rise Time

210ns

Power Dissipation

150W

Fabrika Tedarik Süresi

14 Weeks

Number Of Elements

1

RoHS Durumu

RoHS Compliant

Yükseklik

4.826mm

Jesd30 Code

R-PSSO-G2

Vgsth Max Id

1V @ 250μA

Pulsed Drain Currentmax Idm

520A

Tepe Reflow Süresi (maks. sn)

30

Yayın Yılı

2004

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Radyasyon Dayanımı

No

Current Continuous Drain Id25

130A Tc