IRFZ48ZSPBF

Specifications

Rds On Max Id Vgs

11m Ω @ 37A, 10V

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

69ns

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.67mm

Yayın Yılı

2003

Pulsed Drain Currentmax Idm

240A

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Terminal Formu

GULL WING

Akım Değeri

61A

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

91W Tc

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

4V @ 250μA

Yükseklik

4.576mm

RoHS Durumu

RoHS Compliant

Power Dissipation

91W

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Voltage Rated Dc

55V

Recovery Time

100 ns

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

55V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

2

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

35 ns

Case Connection

DRAIN

Qualification Status

Not Qualified

Pin Sayısı

3

Jesd30 Code

R-PSSO-G2

Continuous Drain Current Id

61A