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IRFZ48VPBF

Infineon Technologies

IRFZ48VPBF

Single MOSFETs Transistors

In StockRoHS: Compliant

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Specifications

Terminal
Through Hole
Rds On Max Id Vgs
12m Ω @ 43A, 10V
Rise Time
200ns
Transistor Application
SWITCHING
Ambalaj
Tube
Kurşunsuz
Lead Free
Element Configuration
Single
Pulsed Drain Currentmax Idm
290A
Operating Mode
ENHANCEMENT MODE
Uzunluk
10.6426mm
Yayın Yılı
2001
Terminal Kaplaması
Matte Tin (Sn) - with Nickel (Ni) barrier
ECCN Kodu
EAR99
Radyasyon Dayanımı
No
Çalışma Sıcaklığı
-55°C~175°C TJ
Reach Svhc
No SVHC
Threshold Voltage
4V
Jedec95 Code
TO-220AB
Vgs Max
±20V
Power Dissipation Max
150W Tc
Tepe Reflow Süresi (maks. sn)
30
Akım Değeri
72A
Transistor Element Material
SILICON
Power Dissipation
150W
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage Rated Dc
60V
Vgsth Max Id
4V @ 250μA
Yükseklik
8.77mm
RoHS Durumu
ROHS3 Compliant
Parça Durumu
Not For New Designs
Recovery Time
100 ns
Gate To Source Voltage Vgs
20V
Drive Voltage Max Rds On Min Rds On
10V
Terminal Sayısı
3
Tepe Reflow Sıcaklığı (°C)
250
Drain To Source Breakdown Voltage
60V
Turn Off Delay Time
157 ns
Pin Sayısı
3
Case Connection
DRAIN
Number Of Elements
1

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