IRFZ46ZPBF

Specifications

Montaj

Through Hole

Nominal Vgs

4 V

Genişlik

4.82mm

Dual Supply Voltage

55V

Direnç

13.6MOhm

Avalanche Energy Rating Eas

97 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

46nC @ 10V

Turn On Delay Time

13 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Fall Time Typ

39 ns

Current Continuous Drain Id25

51A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1460pF @ 25V

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Continuous Drain Current Id

51A

Number Of Elements

1

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Pin Sayısı

3

Turn Off Delay Time

37 ns

Drain To Source Breakdown Voltage

55V

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

RoHS Durumu

RoHS Compliant

Yükseklik

9.017mm

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation

82W

Transistor Element Material

SILICON

Akım Değeri

51A

Power Dissipation Max

82W Tc

Vgs Max

±20V

Jedec95 Code

TO-220AB

Reach Svhc

No SVHC