
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Breakdown Voltage
- 55V
- Turn Off Delay Time
- 52 ns
- Pin Sayısı
- 3
- Terminal Pozisyonu
- SINGLE
- Case Connection
- DRAIN
- Number Of Elements
- 1
- Drainsource On Resistancemax
- 0.0165Ohm
- Continuous Drain Current Id
- 53A
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Seri
- HEXFET®
- Input Capacitance Ciss Max Vds
- 1696pF @ 25V
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 53A Tc
- Fet Type
- N-Channel
- JESD-609 Kodu
- e3
- Fall Time Typ
- 57 ns
- Turn On Delay Time
- 14 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Avalanche Energy Rating Eas
- 152 mJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 72nC @ 10V
- Genişlik
- 4.826mm
- Montaj
- Through Hole
- Rds On Max Id Vgs
- 16.5m Ω @ 28A, 10V
- Transistor Application
- SWITCHING
- Rise Time
- 76ns
- Kurşunsuz
- Lead Free
- Ambalaj
- Tube
- Pulsed Drain Currentmax Idm
- 180A
- Uzunluk
- 10.668mm
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2004
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Radyasyon Dayanımı
- No
- Threshold Voltage
- 4V
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