IRFZ44ZPBF

Specifications

Rds On Max Id Vgs

13.9m Ω @ 31A, 10V

Transistor Application

SWITCHING

Rise Time

68ns

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Pulsed Drain Currentmax Idm

200A

Yayın Yılı

1999

Uzunluk

10.668mm

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Vgs Max

±20V

Power Dissipation Max

80W Tc

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Akım Değeri

51A

Voltage Rated Dc

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation

80W

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.65mm

Vgsth Max Id

4V @ 250μA

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Recovery Time

35 ns

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

55V

Turn Off Delay Time

33 ns

Pin Sayısı

3

Case Connection

DRAIN

Number Of Elements

1

Continuous Drain Current Id

51A

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Input Capacitance Ciss Max Vds

1420pF @ 25V