IRFZ44ZLPBF

Specifications

Transistor Element Material

SILICON

Akım Değeri

51A

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

80W Tc

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yükseklik

4.83mm

Vgsth Max Id

4V @ 250μA

Voltage Rated Dc

55V

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation

80W

Element Configuration

Single

Kurşunsuz

Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

68ns

Rds On Max Id Vgs

13.9m Ω @ 31A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yayın Yılı

2010

Uzunluk

10.6426mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

200A

JESD-609 Kodu

e3

Fall Time Typ

41 ns

Current Continuous Drain Id25

51A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1420pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Montaj

Through Hole

Genişlik

4.826mm

Direnç

13.9MOhm

Avalanche Energy Rating Eas

86 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)