IRFZ44NPBF

Specifications

Nominal Vgs

2.1 V

Montaj

Through Hole

Dual Supply Voltage

55V

Genişlik

4.826mm

Gate Charge Qg Max Vgs

63nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

17.5MOhm

Montaj Tipi

Through Hole

Turn On Delay Time

12 ns

Fall Time Typ

45 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

49A Tc

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

1470pF @ 25V

Seri

HEXFET®

Kılıf / Paket

TO-220-3

Continuous Drain Current Id

49A

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

Turn Off Delay Time

44 ns

Drain To Source Breakdown Voltage

55V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

250

Recovery Time

95 ns

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Vgsth Max Id

4V @ 250μA

Yükseklik

8.77mm

RoHS Durumu

ROHS3 Compliant

Power Dissipation

83W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Voltage Rated Dc

55V

Akım Değeri

49A

Transistor Element Material

SILICON

Jedec95 Code

TO-220AB

Power Dissipation Max

94W Tc

Vgs Max

±20V