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IRFZ44NLPBF

Infineon Technologies

IRFZ44NLPBF

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Nominal Vgs
4 V
Montaj
Through Hole
Genişlik
4.826mm
Dual Supply Voltage
55V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Direnç
17.5MOhm
Gate Charge Qg Max Vgs
63nC @ 10V
Montaj Tipi
Through Hole
Turn On Delay Time
12 ns
JESD-609 Kodu
e3
Fall Time Typ
45 ns
Current Continuous Drain Id25
49A Tc
Fet Type
N-Channel
Input Capacitance Ciss Max Vds
1470pF @ 25V
Fabrika Tedarik Süresi
12 Weeks
Kılıf / Paket
TO-262-3 Long Leads, I2Pak, TO-262AA
Seri
HEXFET®
Continuous Drain Current Id
49A
Number Of Elements
1
Case Connection
DRAIN
Pin Sayısı
3
Turn Off Delay Time
44 ns
Drain To Source Breakdown Voltage
55V
Terminal Sayısı
3
Tepe Reflow Sıcaklığı (°C)
260
Drive Voltage Max Rds On Min Rds On
10V
Gate To Source Voltage Vgs
20V
Parça Durumu
Active
Yükseklik
9.65mm
RoHS Durumu
ROHS3 Compliant
Vgsth Max Id
4V @ 250μA
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Voltage Rated Dc
55V
Power Dissipation
110W
Transistor Element Material
SILICON
Akım Değeri
49A
Vgs Max
±20V
Power Dissipation Max
3.8W Ta 94W Tc
Tepe Reflow Süresi (maks. sn)
30
Threshold Voltage
4V

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