IRFZ44EPBF

Specifications

Current Continuous Drain Id25

48A Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Kılıf / Paket

TO-220-3

Seri

HEXFET®

Input Capacitance Ciss Max Vds

1360pF @ 25V

Fabrika Tedarik Süresi

12 Weeks

Genişlik

4.69mm

Dual Supply Voltage

60V

Nominal Vgs

4 V

Montaj

Through Hole

Turn On Delay Time

12 ns

Montaj Tipi

Through Hole

Avalanche Energy Rating Eas

220 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

23mOhm

Gate Charge Qg Max Vgs

60nC @ 10V

Turn Off Delay Time

70 ns

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

250

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

60V

Number Of Elements

1

Continuous Drain Current Id

48A

Pin Sayısı

3

Qualification Status

Not Qualified

Case Connection

DRAIN

Vgs Max

±20V

Power Dissipation Max

110W Tc

Tepe Reflow Süresi (maks. sn)

30

Jedec95 Code

TO-220AB

Transistor Element Material

SILICON

Akım Değeri

48A

Threshold Voltage

4V

Lead Pitch

2.54mm

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Parça Durumu

Active

Gate To Source Voltage Vgs

20V

Additional Feature

HIGH RELIABILITY, AVALANCHE RATED