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Same-day dispatch from stock
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Verified sourcing
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Compliant
Support
Technical team support
Specifications
- Fet Type
- P-Channel
- Current Continuous Drain Id25
- 11A Tc
- Fall Time Typ
- 37 ns
- JESD-609 Kodu
- e3
- Seri
- HEXFET®
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 350pF @ 25V
- Dual Supply Voltage
- -55V
- Genişlik
- 2.3876mm
- Nominal Vgs
- -4 V
- Montaj
- Through Hole
- Turn On Delay Time
- 13 ns
- Montaj Tipi
- Through Hole
- Gate Charge Qg Max Vgs
- 19nC @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 62 mJ
- Direnç
- 175mOhm
- Turn Off Delay Time
- 23 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drain To Source Breakdown Voltage
- -55V
- Number Of Elements
- 1
- Continuous Drain Current Id
- -11A
- Pin Sayısı
- 3
- Case Connection
- DRAIN
- Vgs Max
- ±20V
- Power Dissipation Max
- 38W Tc
- Tepe Reflow Süresi (maks. sn)
- 30
- Akım Değeri
- -1.6A
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Reach Svhc
- No SVHC
- Threshold Voltage
- -4V
- Parça Durumu
- Active
- Recovery Time
- 71 ns
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation
- 38W
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