IRFU7440PBF

Specifications

RoHS Durumu

ROHS3 Compliant

Direnç

2.4MOhm

Yükseklik

6.22mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.9V @ 100μA

Gate Charge Qg Max Vgs

134nC @ 10V

Power Dissipation

140W

Turn On Delay Time

11 ns

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Nominal Vgs

3 V

Parça Durumu

Active

Genişlik

2.39mm

Input Capacitance Ciss Max Vds

4610pF @ 25V

Threshold Voltage

3V

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Radyasyon Dayanımı

No

Seri

HEXFET®

Transistor Element Material

SILICON

Fall Time Typ

34 ns

Vgs Max

±20V

Power Dissipation Max

140W Tc

Current Continuous Drain Id25

90A Tc

Fet Type

N-Channel

Yayın Yılı

2004

Uzunluk

6.73mm

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Pin Sayısı

3

Pulsed Drain Currentmax Idm

760A

Continuous Drain Current Id

90A

Number Of Elements

1

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

2.4m Ω @ 90A, 10V

Terminal Sayısı

3