Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- AVALANCHE RATED
- Voltage Rated Dc
- -150V
- Drain To Source Voltage Vdss
- 150V
- Power Dissipation
- 110W
- Yükseklik
- 6.22mm
- RoHS Durumu
- ROHS3 Compliant
- Vgsth Max Id
- 4V @ 250μA
- Parça Durumu
- Not For New Designs
- Gate To Source Voltage Vgs
- 20V
- Radyasyon Dayanımı
- No
- Threshold Voltage
- -4V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Reach Svhc
- No SVHC
- Vgs Max
- ±20V
- Power Dissipation Max
- 110W Tc
- Tepe Reflow Süresi (maks. sn)
- 30
- Transistor Element Material
- SILICON
- Akım Değeri
- -13A
- Pulsed Drain Currentmax Idm
- 44A
- Uzunluk
- 6.7056mm
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2004
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 295m Ω @ 6.6A, 10V
- Transistor Application
- SWITCHING
- Rise Time
- 36ns
- Kurşunsuz
- Contains Lead, Lead Free
- Element Configuration
- Single
- Ambalaj
- Tube
- Turn On Delay Time
- 14 ns
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Direnç
- 580MOhm
- Gate Charge Qg Max Vgs
- 66nC @ 10V
- Genişlik
- 2.3876mm
- Dual Supply Voltage
- -150V
- Nominal Vgs
- -4 V
- Montaj
- Through Hole
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
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