IRFU4615PBF

Specifications

Turn Off Delay Time

25 ns

Drain To Source Breakdown Voltage

150V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

33A

Number Of Elements

1

Drainsource On Resistancemax

0.042Ohm

Case Connection

DRAIN

Pin Sayısı

3

JESD-609 Kodu

e3

Fall Time Typ

20 ns

Current Continuous Drain Id25

33A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1750pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Seri

HEXFET®

Nominal Vgs

5 V

Montaj

Through Hole

Genişlik

2.39mm

Dual Supply Voltage

150V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

26nC @ 10V

Turn On Delay Time

15 ns

Montaj Tipi

Through Hole

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

35ns

Rds On Max Id Vgs

42m Ω @ 21A, 10V

Terminal

Through Hole

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Uzunluk

6.7056mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2004

Transistor Element Material

SILICON

Power Dissipation Max

144W Tc