IRFU4510PBF

Specifications

Power Dissipation

143W

Turn On Delay Time

18 ns

Montaj Tipi

Through Hole

Vgsth Max Id

4V @ 100μA

Gate Charge Qg Max Vgs

81nC @ 10V

RoHS Durumu

ROHS3 Compliant

Yükseklik

6.22mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Genişlik

2.39mm

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Nominal Vgs

3 V

Seri

HEXFET®

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

3031pF @ 50V

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

56A Tc

Power Dissipation Max

143W Tc

Vgs Max

±20V

Fall Time Typ

34 ns

Transistor Element Material

SILICON

Pin Sayısı

3

Pulsed Drain Currentmax Idm

252A

Case Connection

DRAIN

Yayın Yılı

2012

Uzunluk

6.73mm

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Number Of Elements

1

Continuous Drain Current Id

56A

Drive Voltage Max Rds On Min Rds On

10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Drain To Source Breakdown Voltage

100V

Rds On Max Id Vgs

13.9m Ω @ 38A, 10V