Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Akım Değeri
- 30A
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- 30
- Vgs Max
- ±20V
- Power Dissipation Max
- 48W Tc
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Lead Pitch
- 2.28mm
- Threshold Voltage
- 4V
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 20V
- Recovery Time
- 29 ns
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 4V @ 250μA
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 6.1mm
- Power Dissipation
- 48W
- Voltage Rated Dc
- 55V
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Rise Time
- 40ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 24.5m Ω @ 18A, 10V
- Terminal
- Through Hole
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2003
- Uzunluk
- 6.6mm
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 120A
- Fall Time Typ
- 24 ns
- JESD-609 Kodu
- e3
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 30A Tc
- Lead Length
- 9.65mm
- Fabrika Tedarik Süresi
- 15 Weeks
- Input Capacitance Ciss Max Vds
- 740pF @ 25V
- Seri
- HEXFET®
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