IRFU3806PBF

Specifications

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

40ns

Transistor Application

SWITCHING

Rds On Max Id Vgs

15.8m Ω @ 25A, 10V

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Uzunluk

6.73mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Pulsed Drain Currentmax Idm

170A

Transistor Element Material

SILICON

Power Dissipation Max

71W Tc

Vgs Max

±20V

Tepe Reflow Süresi (maks. sn)

30

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Radyasyon Dayanımı

No

Recovery Time

33 ns

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

Vgsth Max Id

4V @ 50μA

Yükseklik

6.22mm

RoHS Durumu

RoHS Compliant

Power Dissipation

71W

Turn Off Delay Time

49 ns

Drain To Source Breakdown Voltage

60V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

43A

Number Of Elements

1

Pin Sayısı

3

Fall Time Typ

47 ns

JESD-609 Kodu

e3

Fet Type

N-Channel

Current Continuous Drain Id25

43A Tc

Input Capacitance Ciss Max Vds

1150pF @ 50V