Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 2.45V @ 250μA
- RoHS Durumu
- RoHS Compliant
- Yükseklik
- 6.22mm
- Power Dissipation
- 79W
- Voltage Rated Dc
- 20V
- Gate To Source Voltage Vgs
- 20V
- Recovery Time
- 28 ns
- Parça Durumu
- Obsolete
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Threshold Voltage
- 2V
- Radyasyon Dayanımı
- No
- Akım Değeri
- 93A
- Transistor Element Material
- SILICON
- Vgs Max
- ±20V
- Power Dissipation Max
- 79W Tc
- Yayın Yılı
- 2004
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 6.7056mm
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 5.7m Ω @ 15A, 10V
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Rise Time
- 13ns
- Transistor Application
- SWITCHING
- Gate Charge Qg Max Vgs
- 27nC @ 4.5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 140 mJ
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 12 ns
- Montaj
- Through Hole
- Nominal Vgs
- 2 V
- Genişlik
- 2.3876mm
- Input Capacitance Ciss Max Vds
- 2160pF @ 10V
- Seri
- HEXFET®
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Fall Time Typ
- 5.2 ns
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 93A Tc
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