Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate To Source Voltage Vgs
- 20V
- Recovery Time
- 53 ns
- Parça Durumu
- Obsolete
- Vgsth Max Id
- 4V @ 250μA
- RoHS Durumu
- RoHS Compliant
- Yükseklik
- 6.1mm
- Power Dissipation
- 140W
- Voltage Rated Dc
- 100V
- Additional Feature
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Akım Değeri
- 42A
- Transistor Element Material
- SILICON
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation Max
- 140W Tc
- Vgs Max
- ±20V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Lead Pitch
- 2.28mm
- Threshold Voltage
- 4V
- Radyasyon Dayanımı
- No
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- ECCN Kodu
- EAR99
- Yayın Yılı
- 2004
- Uzunluk
- 6.6mm
- Operating Mode
- ENHANCEMENT MODE
- Pulsed Drain Currentmax Idm
- 220A
- Ambalaj
- Tube
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Rise Time
- 43ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 18m Ω @ 33A, 10V
- Terminal
- Through Hole
- Montaj
- Through Hole
- Nominal Vgs
- 4 V
- Dual Supply Voltage
- 100V
- Genişlik
- 2.3mm
- Gate Charge Qg Max Vgs
- 100nC @ 10V
- Direnç
- 18MOhm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Avalanche Energy Rating Eas
- 150 mJ
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