IRFU3607PBF

Specifications

Rds On Max Id Vgs

9m Ω @ 46A, 10V

Terminal

Through Hole

Ambalaj

Tube

Kurşunsuz

Lead Free

Element Configuration

Single

Rise Time

110ns

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Uzunluk

6.7056mm

Yayın Yılı

2008

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Threshold Voltage

4V

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

140W Tc

Tepe Reflow Süresi (maks. sn)

30

Vgsth Max Id

4V @ 100μA

Yükseklik

6.22mm

RoHS Durumu

ROHS3 Compliant

Power Dissipation

140W

Recovery Time

50 ns

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Drain To Source Breakdown Voltage

75V

Drive Voltage Max Rds On Min Rds On

10V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Turn Off Delay Time

43 ns

Case Connection

DRAIN

Pin Sayısı

3

Drain Currentmax Abs Id

80A

Continuous Drain Current Id

56A

Drainsource On Resistancemax

0.009Ohm

Number Of Elements

1

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

3070pF @ 50V