IRFU2307ZPBF

Specifications

Fet Type

N-Channel

Power Dissipation Max

110W Tc

Vgs Max

±20V

Current Continuous Drain Id25

42A Tc

Fall Time Typ

29 ns

Input Capacitance

2.19nF

Seri

HEXFET®

Radyasyon Dayanımı

No

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Çalışma Sıcaklığı

-55°C~175°C TJ

Reach Svhc

No SVHC

Input Capacitance Ciss Max Vds

2190pF @ 25V

Threshold Voltage

4V

Dual Supply Voltage

75V

Genişlik

2.3876mm

Parça Durumu

Obsolete

Maks. Çalışma Sıcaklığı

175°C

Recovery Time

47 ns

Nominal Vgs

4 V

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Montaj Tipi

Through Hole

Turn On Delay Time

16 ns

Power Dissipation

110W

Rds On Max

16 mΩ

Drain To Source Voltage Vdss

75V

Gate Charge Qg Max Vgs

75nC @ 10V

Vgsth Max Id

4V @ 100μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

6.22mm

RoHS Durumu

RoHS Compliant

Min. Çalışma Sıcaklığı

-55°C

Rise Time

65ns

Tedarikçi Cihaz Paketi

IPAK (TO-251)

Ambalaj

Tube

Turn Off Delay Time

44 ns

Drive Voltage Max Rds On Min Rds On

10V

Terminal

Through Hole

Rds On Max Id Vgs

16mOhm @ 32A, 10V

Drain To Source Breakdown Voltage

75V