Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Yayın Yılı
- 1998
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 6.7056mm
- Pulsed Drain Currentmax Idm
- 68A
- Element Configuration
- Single
- Kurşunsuz
- Contains Lead, Lead Free
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Rise Time
- 34ns
- Rds On Max Id Vgs
- 75m Ω @ 10A, 10V
- Terminal
- Through Hole
- Contact Plating
- Tin
- Gate To Source Voltage Vgs
- 20V
- Parça Durumu
- Active
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 6.22mm
- Vgsth Max Id
- 4V @ 250μA
- Voltage Rated Dc
- 55V
- Additional Feature
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Power Dissipation
- 38W
- Transistor Element Material
- SILICON
- Akım Değeri
- 17A
- Tepe Reflow Süresi (maks. sn)
- 30
- Power Dissipation Max
- 45W Tc
- Vgs Max
- ±20V
- Threshold Voltage
- 4V
- Reach Svhc
- No SVHC
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Continuous Drain Current Id
- 17A
- Number Of Elements
- 1
- Case Connection
- DRAIN
- Pin Sayısı
- 3
- Turn Off Delay Time
- 19 ns
- Drain To Source Breakdown Voltage
- 55V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Montaj
- Through Hole
- Nominal Vgs
- 4 V
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