IRFTS9342TRPBF

Specifications

Kurşunsuz

Lead Free

Turn Off Delay Time

45 ns

Ambalaj

Tape & Reel (TR)

Transistor Application

SWITCHING

Rise Time

13ns

Rds On Max Id Vgs

40m Ω @ 5.8A, 10V

Drain To Source Breakdown Voltage

-30V

Terminal Sayısı

6

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Continuous Drain Current Id

5.8A

Number Of Elements

1

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2012

Terminal Pozisyonu

DUAL

Pin Sayısı

6

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Fall Time Typ

28 ns

Current Continuous Drain Id25

5.8A Ta

Power Dissipation Max

2W Ta

Vgs Max

±20V

Fet Type

P-Channel

Input Capacitance Ciss Max Vds

595pF @ 25V

Threshold Voltage

-1.3V

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Radyasyon Dayanımı

No

Kılıf / Paket

SOT-23-6

Seri

HEXFET®

Recovery Time

30 ns

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

40MOhm

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

12nC @ 10V

Vgsth Max Id

2.4V @ 25μA