IRFSL7537PBF

Specifications

Input Capacitance Ciss Max Vds

7020pF @ 25V

Threshold Voltage

3.7V

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®, StrongIRFET™

Number Of Channels

1

Transistor Element Material

SILICON

Fall Time Typ

84 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Current Continuous Drain Id25

173A Tc

Power Dissipation Max

230W Tc

Vgs Max

±20V

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

554 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

3.7V @ 150μA

Gate Charge Qg Max Vgs

210nC @ 10V

Power Dissipation

230W

Turn On Delay Time

15 ns

Montaj Tipi

Through Hole

Montaj

Through Hole

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

Drain To Source Breakdown Voltage

60V

Rds On Max Id Vgs

3.3m Ω @ 100A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

6V 10V

Element Configuration

Single

Ambalaj

Tube

Turn Off Delay Time

82 ns

Weight

2.084002g

Transistor Application

SWITCHING

Rise Time

105ns

Yayın Yılı

2013

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN