IRFSL7440PBF

Specifications

Fall Time Typ

68 ns

Transistor Element Material

SILICON

Fet Type

N-Channel

Vgs Max

±20V

Power Dissipation Max

208W Tc

Current Continuous Drain Id25

120A Tc

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Input Capacitance Ciss Max Vds

4730pF @ 25V

Threshold Voltage

3V

Seri

HEXFET®, StrongIRFET™

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Nominal Vgs

3 V

Parça Durumu

Active

Vgsth Max Id

3.9V @ 100μA

Gate Charge Qg Max Vgs

135nC @ 10V

RoHS Durumu

ROHS3 Compliant

Direnç

2.5MOhm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

208W

Turn On Delay Time

24 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

Ambalaj

Tube

Turn Off Delay Time

115 ns

Kurşunsuz

Lead Free

Rise Time

68ns

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

40V

Rds On Max Id Vgs

2.5m Ω @ 100A, 10V

Drive Voltage Max Rds On Min Rds On

6V 10V

Terminal Sayısı

3

Continuous Drain Current Id

120A

ECCN Kodu

EAR99

Number Of Elements

1

Case Connection

DRAIN