IRFSL4410ZPBF

Specifications

Kurşunsuz

Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

52ns

Rds On Max Id Vgs

9m Ω @ 58A, 10V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.668mm

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Power Dissipation Max

230W Tc

Vgs Max

±20V

Çalışma Sıcaklığı

-55°C~175°C TJ

Gate To Source Voltage Vgs

20V

Parça Durumu

Active

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.65mm

Vgsth Max Id

4V @ 150μA

Power Dissipation

230W

Turn Off Delay Time

43 ns

Drain To Source Breakdown Voltage

100V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

97A

Number Of Elements

1

Drainsource On Resistancemax

0.009Ohm

Qualification Status

Not Qualified

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Pin Sayısı

3

JESD-609 Kodu

e3

Fall Time Typ

57 ns

Current Continuous Drain Id25

97A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

4820pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA