IRFSL4310ZPBF

Specifications

Gate To Source Voltage Vgs

20V

Parça Durumu

Obsolete

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.65mm

Vgsth Max Id

4V @ 150μA

Power Dissipation

250W

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation Max

250W Tc

Vgs Max

±20V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Yayın Yılı

2012

Uzunluk

10.668mm

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

560A

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

60ns

Rds On Max Id Vgs

6m Ω @ 75A, 10V

Montaj

Through Hole

Nominal Vgs

4 V

Genişlik

4.826mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

170nC @ 10V

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

20 ns

JESD-609 Kodu

e3

Fall Time Typ

57 ns

Current Continuous Drain Id25

120A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

6860pF @ 50V

Fabrika Tedarik Süresi

15 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Continuous Drain Current Id

120A

Number Of Elements

1