Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Seri
- HEXFET®
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 5380pF @ 50V
- Fet Type
- N-Channel
- Power Dissipation Max
- 375W Tc
- Current Continuous Drain Id25
- 72A Tc
- Tepe Reflow Süresi (maks. sn)
- 30
- Fall Time Typ
- 22 ns
- Transistor Element Material
- SILICON
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 17 ns
- Power Dissipation
- 375W
- Gate Charge Qg Max Vgs
- 150nC @ 10V
- Vgsth Max Id
- 5V @ 250μA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Yükseklik
- 9.652mm
- Avalanche Energy Rating Eas
- 250 mJ
- Direnç
- 22MOhm
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 4.826mm
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Terminal Sayısı
- 3
- Tepe Reflow Sıcaklığı (°C)
- 260
- Rds On Max Id Vgs
- 22m Ω @ 44A, 10V
- Drain To Source Breakdown Voltage
- 200V
- Rise Time
- 18ns
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Turn Off Delay Time
- 56 ns
- Kurşunsuz
- Lead Free
- Element Configuration
- Single
- Pin Sayısı
- 3
- Case Connection
- DRAIN
- Operating Mode
- ENHANCEMENT MODE
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