Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Süresi (maks. sn)
- 30
- Threshold Voltage
- 5V
- Reach Svhc
- No SVHC
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 30V
- Maks. Çalışma Sıcaklığı
- 175°C
- Parça Durumu
- Not For New Designs
- RoHS Durumu
- ROHS3 Compliant
- Min. Çalışma Sıcaklığı
- -55°C
- Yükseklik
- 9.65mm
- Vgsth Max Id
- 5V @ 250μA
- Drain To Source Voltage Vdss
- 200V
- Power Dissipation
- 3.8W
- Max Power Dissipation
- 300W
- Ambalaj
- Tube
- Transistor Application
- SWITCHING
- Rise Time
- 95ns
- Ds Breakdown Voltagemin
- 200V
- Rds On Max Id Vgs
- 54m Ω @ 26A, 10V
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Yayın Yılı
- 2004
- Uzunluk
- 10.67mm
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Fall Time Typ
- 47 ns
- Current Continuous Drain Id25
- 43A Tc
- Fet Type
- N-Channel
- Input Capacitance Ciss Max Vds
- 2900pF @ 25V
- Fabrika Tedarik Süresi
- 14 Weeks
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Seri
- HEXFET®
- Montaj
- Through Hole
- Genişlik
- 4.826mm
- Avalanche Energy Rating Eas
- 460 mJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 91nC @ 10V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 16 ns
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