IRFSL3806PBF

Specifications

Turn Off Delay Time

49 ns

Drain To Source Breakdown Voltage

60V

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

260

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

43A

Number Of Elements

1

Case Connection

DRAIN

Pin Sayısı

3

JESD-609 Kodu

e3

Fall Time Typ

47 ns

Current Continuous Drain Id25

43A Tc

Fet Type

N-Channel

Input Capacitance Ciss Max Vds

1150pF @ 50V

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Seri

HEXFET®

Montaj

Through Hole

Genişlik

4.826mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Direnç

15.8MOhm

Gate Charge Qg Max Vgs

30nC @ 10V

Montaj Tipi

Through Hole

Turn On Delay Time

6.3 ns

Kurşunsuz

Lead Free

Element Configuration

Single

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

40ns

Rds On Max Id Vgs

15.8m Ω @ 25A, 10V

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Uzunluk

10.668mm

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2008

Pulsed Drain Currentmax Idm

170A

Transistor Element Material

SILICON

Vgs Max

±20V

Power Dissipation Max

71W Tc

Tepe Reflow Süresi (maks. sn)

40