IRFSL3607PBF

Specifications

Rds On Max Id Vgs

9m Ω @ 46A, 10V

Terminal

Through Hole

Kurşunsuz

Lead Free

Ambalaj

Tube

Transistor Application

SWITCHING

Rise Time

110ns

Yayın Yılı

2008

Operating Mode

ENHANCEMENT MODE

Uzunluk

10.668mm

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Kodu

EAR99

Threshold Voltage

4V

Reach Svhc

No SVHC

Çalışma Sıcaklığı

-55°C~175°C TJ

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

40

Power Dissipation Max

140W Tc

Vgs Max

±20V

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.65mm

Vgsth Max Id

4V @ 100μA

Power Dissipation

140W

Gate To Source Voltage Vgs

20V

Recovery Time

50 ns

Parça Durumu

Obsolete

Drain To Source Breakdown Voltage

75V

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Turn Off Delay Time

43 ns

Terminal Pozisyonu

SINGLE

Case Connection

DRAIN

Pin Sayısı

3

Continuous Drain Current Id

80A

Number Of Elements

1

Drainsource On Resistancemax

0.009Ohm

Input Capacitance Ciss Max Vds

3070pF @ 50V

Fabrika Tedarik Süresi

15 Weeks

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA