Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±20V
- Power Dissipation Max
- 300W Tc
- Akım Değeri
- 170A
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Reach Svhc
- No SVHC
- Threshold Voltage
- 4V
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation
- 300W
- Voltage Rated Dc
- 75V
- Vgsth Max Id
- 4V @ 150μA
- Yükseklik
- 9.65mm
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 68ns
- Transistor Application
- SWITCHING
- Ambalaj
- Tube
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 4.1m Ω @ 75A, 10V
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Pulsed Drain Currentmax Idm
- 670A
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 10.668mm
- Yayın Yılı
- 2008
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 120A Tc
- Fall Time Typ
- 68 ns
- JESD-609 Kodu
- e3
- Seri
- HEXFET®
- Kılıf / Paket
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 6920pF @ 50V
- Genişlik
- 4.826mm
- Montaj
- Through Hole
- Montaj Tipi
- Through Hole
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time
- 20 ns
- Gate Charge Qg Max Vgs
- 170nC @ 10V
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