IRFSL3107PBF

Specifications

Tepe Reflow Süresi (maks. sn)

40

Current Continuous Drain Id25

195A Tc

Vgs Max

±20V

Power Dissipation Max

370W Tc

Fet Type

N-Channel

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Fall Time Typ

100 ns

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Radyasyon Dayanımı

No

Seri

HEXFET®

Input Capacitance Ciss Max Vds

9370pF @ 50V

Çalışma Sıcaklığı

-55°C~175°C TJ

Parça Durumu

Not For New Designs

Genişlik

4.826mm

Gate To Source Voltage Vgs

20V

Montaj

Through Hole

Power Dissipation

370W

Montaj Tipi

Through Hole

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time

19 ns

RoHS Durumu

ROHS3 Compliant

Yükseklik

9.65mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

4V @ 250μA

Gate Charge Qg Max Vgs

240nC @ 10V

Transistor Application

SWITCHING

Rise Time

110ns

Kurşunsuz

Lead Free

Ambalaj

Tube

Turn Off Delay Time

99 ns

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

75V

Rds On Max Id Vgs

3m Ω @ 140A, 10V

Number Of Elements

1

ECCN Kodu

EAR99

Terminal Kaplaması

Matte Tin (Sn) - with Nickel (Ni) barrier

Continuous Drain Current Id

230A